There has been growing interest in DRAMs that do not lose their content when the power to them is cut.
One explored option is the combination of DRAM with Flash on one chip, but another technology could become much more interesting for those who require performance over capacity. ST-MRAM, or Spin-Torque MRAM.
Everspin just announced its first ST-MRAM, built in a DDR3 form factor module. The device is compatible with the JEDEC DDR3 1600 specification with a "memory bandwidth of up to 3.2 GBytes/second at nanosecond class latency". Samples of the modules are available now and volume shipments are expected for 2013.
Interestingly, MRAM has been positioned for more than a decade as a potential higher-performance replacement for NAND Flash, due to its non-volatile characteristics. However, the technology is too far away from being able to compete on a capacity level - even this new chip has just 64 Mb (8 MB) capacity. In fact, Everspin is currently producing the only commercially available MRAM chips, which hold only 4 Mb and are produced in an antiquated 180 nm process. Remember, Intel's latest CPUs are built in 22 nm.
The upside, however, is MRAM's performance as well as its low power consumption. The memory technology can outpace not only Flash, but DRAM as well and is seen to be operating on the same level as SRAM. With some investment and product demand, MRAM may have an opportunity to appear on the big stage.