ProMos Technologies will devote 100% of capacity at its 12" fab (Fab II) in Hsinchu to DDR2 production, starting in the second quarter of this year, according to company chairman ML Chen. The DRAM maker will also devote 50% of capacity at its 12" fab (Fab III) in the Central Taiwan Science Park (CTSP) to DDR2 production on 90nm process node starting from the second quarter, Chen indicated
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